Sr. No.
|
Title of the Paper
|
Name of the Journal
|
Volume, Year & Pages
|
ISSN No
|
National/ International
|
1. 1.
|
Preparation of Rare Earth CeO2 Thin Films Using Metal Organic Decomposition Method for Metal-Oxide- semiconductor Capacitors
|
Materials Science: Materials in Electronics
|
Accepted in April 2017
|
1573-482X
|
International
|
2. 2.
|
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
|
Semiconductors
|
51 (1), 2017, 131-133
|
1090 -6479
|
International
|
3. 3.
|
Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
|
Materials Research Bulletin
|
87, 2017, 208-213
|
0025-5408
|
International
|
4.
|
Physical characterization of hafnium oxide for CMOS technology
|
SPEED Journal of Research in Electronics
|
1, 2016, 10-12.
|
2349-8226
|
International
|
5.
|
Structural and Electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge (100) prepared by PEALD
|
Materials Science in Semiconductor Processing
|
56, 2016, 277-281
|
1369-8001
|
International
|
6.
|
HfO2 gate dielectric on Ge(111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment
|
Applied Surface Science
|
364, 2016, 747-751
|
0169-4332
|
International
|
7.
|
Enhancement in mechanical properties of silica low-k thin films using wet chemical techniques
|
Indian Journal of Pure and Applied Physics
|
54(7), 2016, 439-442
|
0019-5596
|
International
|
8.
|
HfO2 high-k thin film MOS capacitors for advanced CMOS technology
|
Indian Journal of Physics
|
89(11), 2015, 1177-1181
|
0973-1458
|
International
|
9.
|
Fabrication of ALD-ZrO2/n-Ge MOS capacitors with Pt/Ti bilayer metal electrodes for advanced CMOS devices
|
Silicon (Springer)
|
8. 8(3), 2016, 345-350
|
1876 -9918
|
International
|
10.
|
Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
|
Semiconductors (Springer)
|
48 (4), 2014, 497-500
|
1090 -6479
|
International
|
11.
|
Sol-gel deposited ceria thin films as gate dielectric for CMOS technology
|
Bulletin of Material Science
|
36(2), 2013, 259-263
|
0973 -7669
|
International
|
12.
|
Effect of post-deposition annealing temperature on RF-Sputtered HfO2 thin film for advanced CMOS Technology
|
Solid State Sciences
|
15, 2013, 24-28
|
1293-2558
|
International
|
13.
|
Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors
|
Solid State Electronics
|
62(1), 2011, 44-47
|
0038-1101
|
International
|
14.
|
Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor
|
Journal of Nano-and Electronic Physics
|
5(2), 2013, 03002-1-03002-3
|
2306-4277
|
International
|
15.
|
Surface passivation of germanium using NH3 ambient in RTP for high mobility MOS structure
|
Journal of Nano-and Electronic Physics
|
5(2), 2013, 02009-1-02009-3
|
2306-4277
|
International
|
16.
|
Pt-Ti/ALD-Al2O3/p-Si MOS capacitors for future ULSI technology
|
Journal of Nano-and Electronic Physics
|
3(1), 2011, 647-650
|
2306-4277
|
International
|